1 flexpak cib module three phase converter + three phase inverter + brake + thermistor 10 amperes/600 volts CM10AD05-12H po werex, inc., 200 hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 dimensions inches millimeters a 3.94 100.0 b 2.20 56.0 c 3.54 90.0 d 1.10 28.0 e 0.39 10.0 f 1.42 36.0 g 0.30 7.5 h 0.31 8.0 j 0.30 7.62 k 0.10 2.54 l 0.39 10.0 m 0.16 4.0 n 0.51 13.0 dimensions inches millimeters p 0.10 2.5 q 0.24 6.0 r 0.20 5.0 s 0.18 4.5 t 0.02 0.6 u 2.09 53.0 v 0.02 0.6 w 0.03 0.8 x 0.04 1.0 y 0.04 1.0 z 0.39 10.0 aa 0.47 12.0 bb 0.19 5.0 description: po w erex flexpak cib modules are designed for use in switching applications. each module consists of a three phase diode converter section, a three phase igbt inverter section, a brake and a thermistor. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(sat) discrete super-fast recovery (70ns) f ree-wheel diodes high frequency operation (20-25 khz) isolated baseplate for easy heat sinking applications: ac & dc motor control motion/servo control general purpose inverters robotics ordering information: example: select the complete module part number you desire from the table below - i.e. CM10AD05-12H is a 600v (v ces ), 10 ampere flexpak cib po w er module. current rating v ces t ype amperes volts (x 50) cm 10 12 main terminal control terminal label r st b th1 p1 n1 open open open gwn u th2 v gb w e gun gvn gup p eup evp gvp gwp ewp a c b f e d ghhhhhh j j k k k g h h h h k hhh h k k k k u n m l p q w x y r s z aa bb v t thick r s t n1 p1 p u gb b eup gun gup e th1 th2 w gwn ewp gwp v gvn evp gvp outline drawing and circuit diagram
2 CM10AD05-12H flexpak cib module three phase converter + three phase inverter + brake + thermistor 10 amperes/600 volts po werex, inc., 200 hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 absolute maximum ratings, t j = 25 c unless otherwise specified characteristics symbol CM10AD05-12H units po w er device junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c mounting torque, m4 mounting screws 13 in-lb module weight (typical) 120 grams isolation voltage, ac 1 minute, 60hz v iso 2500 volts converter sector repetitive peak reverse voltage v rrm 800 volts recommended ac input voltage e a 220 volts dc output current (3 phase rectifying circuit) i o 10 amperes surge (non-repetitive) forward current (1/2 cycle at 60hz, peak value) i fsm 200 amperes i 2 t for fusing (1 cycle of surge current) i 2 t 165 a 2 s igbt inverter and brake sector collector-emitter voltage (g-e short) v ces 600 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 25 c) i c 10 amperes collector current (pulse)** i cm 20 amperes emitter current* (t c = 25 c) i e 10 amperes emitter current* (pulse)** i em 20 amperes maximum collector dissipation (t c = 25 c, t j <150 c) p c 41 watts repetitive peak reverse voltage (brake sector) v rrm 600 volts f orward current (brake sector) i fm 10 amperes * characteristics of the anti-parallel emitter-collector free-wheel diode. ** pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed maximum rating.
3 CM10AD05-12H flexpak cib module three phase converter + three phase inverter + brake + thermistor 10 amperes/600 volts po werex, inc., 200 hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 electrical and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units converter sector repetitive reverse current i rrm v r = v rrm , t j = 150 c 8ma f orward voltage drop v fm i f = 20a 1.6 volts thermal resistance (junction-to-case) r th(j-c) p er diode 3.1 c/w igbt inverter and brake sector collector cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate-emitter threshold voltage v ge(th) v ce = 10v, i c = 1.0ma 4.5 6.0 7.5 volts gate-emitter cutoff current i ges v ge = v ges , v ce = 0v 0.5 a collector-emitter saturation voltage** v ce(sat) v ge = 15v, i c = 10a, t j = 25 c 2.1 2.8 volts v ge = 15v, i c = 10a, t j = 150 c 2.15 volts input capacitance c ies 1.0 nf output capacitance c oes v ge = 0v, v ce = 10v 0.9 nf reverse transfer capacitance c res 0.2 nf t otal gate charge q g v cc = 300v, i c = 10a, v ge = 15v 30 nc resistive load turn-on delay time t d(on) v ge1 = v ge2 = 15v, 120 ns switching rise time t r v cc = 300v, i c = 10a, 300 ns times turn-off delay time t d(off) r g = 63 ? , 200 ns (invertor sector) fall time t f resistive load 300 ns emitter-collector voltage* (inverter sector) v ec i e = 10a, v ge = 0v 2.8 volts reverse recovery time* (inverter sector) t rr i e = 10a, v ge = 0v, 110 ns reverse recovery charge* (inverter sector) q rr di e /dt = -20a/ s 0.03 c thermal resistance, junction to case r th(j-c) qp er igbt 3.0 c/w r th(j-c) dp er fwdi 4.6 c/w r th(j-c) d clamp diode part 3.1 c/w f orward voltage drop (brake sector) v fm i f = 10a, clamp diode part 1.5 volts thermistor sector thermistor resistance r to t o = 25 c (298k) 100 k ? material constant*** t 1 = 25 c, t 2 = 50 c 4000 k thermal characteristics contact thermal resistance r th(c-f) case to fin per module 0.05 c/w thermal grease applied * characteristics of the anti-parallel emitter-collector free-wheel diode. ** pulse width and repetition rate should be such as to cause negligible temperature rise. *** t = 1 ln r t t o r to + 1 1 ] [
4 CM10AD05-12H flexpak cib module three phase converter + three phase inverter + brake + thermistor 10 amperes/600 volts po werex, inc., 200 hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0246810 10 0 v ge = 20v 15 12 11 8 7 t j = 25 o c 5 15 20 10 9 gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) transfer characteristics (typical) 048121620 15 10 5 0 20 v ce = 10v t j = 25 c t j = 125 c collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 5 0510 15 4 3 2 1 0 v ge = 15v t j = 25 c t j = 125 c 20 gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 048121620 8 6 4 2 0 t j = 25 c i c = 4a i c = 20a i c = 10a 0 0.8 1.6 2.4 3.2 4.0 10 0 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 1 10 2 emitter current, i e , (amperes) t j = 25 c collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 -1 10 0 10 2 10 0 10 -1 10 1 10 -2 10 -3 v ge = 0v f = 1mhz 10 1 c ies c oes c res half-bridge switching characteristics (typical) 10 0 collector current, i c , (amperes) switching time, (ns) 10 3 10 2 10 1 10 2 10 0 10 1 t f emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 2 10 0 10 1 10 2 10 1 10 0 t rr i rr 10 0 10 -1 10 -2 reverse recovery current, i rr , (amperes) di/dt = -20a/ sec t j = 25 c gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge, v ge 20 0102 030 16 12 8 4 0 40 50 v cc = 300v v cc = 200v t d(off) t r v cc = 300v v ge = 15v r g = 62 ? t j = 125 c t d(on) i c = 10a
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